As semiconductor devices become more highly integrated and miniaturized, it is necessary to control native oxide film growth on the wafer surface at the time of loading for applications such as formation of contact Poly-Si, capacitor nitride, ultra thin oxidation and selective oxidation, etc.
Hitachi Kokusai Electric recommends Load Lock vertical Diffusion/LPCVD Systems, VERTRON-V, for these processes to utilize the unique oxygen free load lock chamber mounted directly underneath reactor tube.
The VERTRON-V series supports other emerging processes for the development of 0.10nm devices such as anneal steps for Cu interconnect. |