PRODUCTS
QUIXACE EPI Vertical for 300mm Wafers

Kokusai's LPCVD epitaxial system 300mm
QUIXACE EPI system offers the SiGe community a cost-effective batch solution designed for high volume production while keeping the high-quality dopant profiles expected on selective and non-selective epitaxial grown films of less than one micron. With a growth-rate ~10 angstroms per minute,

Kokusai is able to provide the film qualities expected in advanced device design while providing the throughput required by manufacturing.

Kokusai has introduced its ultra-clean low pressure vertical batch furnace for SiGe epitaxial growth that operates within normal CVD (chemical vapor deposition) pressure regimes. Our batch vertical furnace system is able to process up to 100 wafers at a time and is capable of high-quality SiGe epitaxial growth at low temperatures in an extremely clean process environment.

Building from a Firm Foundation

Kokusai’s 300mm batch epi configuration features our Load-Lock (L/L) loading chamber. This is a true vacuum load lock. Once the wafers are loaded into the boat, the chamber is sealed and N₂ cycle purged of oxygen and moisture creating an environment of <1 ppm O₂ and H₂O.

Features

• Vacuum Load Lock Chamber for controlled atmosphere (high cleanliness and lower oxygen concentration).
• High Throughput (Max 125 wafers/batch)
• 300mm Wafer Capable
• Short Cycle Time for Process