QUIXACE is Kokusai's new platform for vertical, batch processing of 300mm wafers. QUIXACE offers throughput enhancements on core diffusion and LPCVD technologies through advances in temperature control, wafer handling automation, reactor purge, and temperature ramping. Incorporating over 20 years of vertical, batch technology
into one platform.

 

The QUIXACE platform is available in a number of configurations including Large Batch (QL), Vacuum Load Lock (QV), Mini Batch (QM), Nitrogen Purge Load Area (QLN or QMN). Several standard options are also available for continuous batch processing. Batch configurations adaptable for large and small load-sizes (50-125 wafers/batch).

 
TYPICAL PROCESS APPLICATIONS
   
BCD ( Balance Controlled Deposition )
   
LP CVD
  - Nitride( Low Temperature, Si rich Nitride)
  - Poly, SiO, TEOS
Oxidation
  - BIO ( Batch Isotropic Oxidation )
  - Pyro/Wet, Dry
Anneal
  - High Temperature N2, Ar, H2
  - Ultra High Temperature for SOI
  - Low Temperature Cure
  - Cu Anneal
Epitaxial Growth
  - SiGe/Ge Selective Epi
  - Bulk Epi
 
 
QUIXACE FEATURES
    High Throughput with Short Cycle Time
    Minimum Scheduled Down Time with In-Situ Gas Cleaning
    Fast Ramp Up / Down Heater
    Very High Speed WaferTransfer Automation
An optional N2 purge vacuum load lock is available for oxygen and moisture sensitive processes(lower oxygen and H2O concentration).
* QUIXACE is a registered trademark or a trademark of Hitachi Kokusai Electric, Inc.