KSEC MARORA

PROCESS APPLICATIONS

Plasma Nitridation
	Oxide Nitridation
	Plasma Oxidation
	Gate Dielectric
Selective Oxidation
	Anisotropic Oxidation

MARORA’s MMT Plasma Nitridition System uses a unique Modified Magnetron Type (MMT) plasma source. The plasma has high density and low electron temperature (<1eV) providing a highly uniform nitridation process without damage to substrates. MARORA is the best gate insulator film solution for 32nm logic and flash memory devices.

MARORA FEATURES

High Mechanical Throughput ： 135WPH with 4 chambers (max) and uptime>95%
Low Energy Consumption: uses 1/10 high frequency Energy compared with other plasma technology.
Very Low ParticleDamage: plasma generation is suppressed by a line of magnetic force.
Low Temperature Process: room temperature to 700°C
High temperature Nitridation: more stable film composition.
Excellent Plasma Uniformity

* MARORA is a registered trademark or a trademark of Hitachi Kokusai Electric, Inc.