PROCESS APPLICATIONS
  • Plasma Nitridation
  Oxide Nitridation
  Plasma Oxidation
  Gate Dielectric
  • Selective Oxidation
  Anisotropic Oxidation

MARORA’s MMT Plasma Nitridition System uses a unique Modified Magnetron Type (MMT) plasma source. The plasma has high density and low electron temperature (<1eV) providing a highly uniform nitridation process without damage to substrates. MARORA is the best gate insulator film solution for 32nm logic and flash memory devices.

 
 
MARORA FEATURES
  • High Mechanical Throughput : 135WPH with 4 chambers (max) and uptime>95%
  • Low Energy Consumption: uses 1/10 high frequency Energy compared with other plasma technology.
  • Very Low Particle Damage: plasma generation is suppressed by a line of magnetic force.
  • Low Temperature Process: room temperature to 700°C
  • High temperature Nitridation: more stable film composition.
  • Excellent Plasma Uniformity

* MARORA is a registered trademark or a trademark of Hitachi Kokusai Electric, Inc.