The Kokusai BIO (Batch Isotropic Oxidation) system employs a new isotropic oxidation process developed by Kokusai that enables a simple furnace oxidation to be utilized for a variety of device applications. Further, the Kokusai solution employs a large batch approach to isotropic oxidation that provides the easiest maintenance and lowest CoO available.

One aspect of thermal oxidation that poses myriad challenges as devices shrink to 65nm and beyond is the propensity to deposit at different growth rates on different Si crystal orientations (<1-1-0> and <1-0-0>) and on different underlayer materials (i.e. poly Si and Si3N4). Another barrier in this device realm is the need to reduce processing temperatures as thermal budgets shrink along with the device geometries The QUIACE BIO system eiliminates these barries

 

 
TYPICAL PROCESS APPLICATIONS
   
BIO ( Batch Isotropic Oxidation)
  -Low Pressure H2/O2
  - Low / ATM Pressure H2 / O2 / N2O
  - Low Pressure H2>O2
  - HfO
  - Isotropic Oxidation
  - Tunnel Oxidation
  - Metal / Poly Si Selective Oxidation
 
 
 
BIO SYSTEM FEATURES
   

Application

Kokusai System Advantages

STI Liner

Improved corner rounding and elimination of “bird’s beak”

Gate / Tunnel Dielectric Superior device reliability and lower leakage
Inter Poly Dielectric Exceptional Uniformity – less than 1A range across wafer
Metal / Poly Selective Oxidation Oxide growth is selective to metal and poly Si
Monos Gate Oxidation Oxidation of Si3N4 at low temperatures
All Applications
  • Excellent Uniformity – less than 1 angstrom range across wafer
  • Large Batch provides lowest CoO
    Easy maintenance and highest uptime
    Isotropic Growth Rate
  • Very similar on <1-1-0> and <1-0-0> orientation
  • Very similar on poly Si and Si3N4
 
* QUIXACE is a registered trademark or a trademark of Hitachi Kokusai Electric, Inc.