ADVANCED PRODUCT / APPLICATION SUMMARY

TOOL
PROCESS
FEATURES

Ultra-high Temperature Anneal System

High Quality Wafer

  • High Throughput
  • Slip Free


MMT Plasma System


Gate Dielectric

  • Wide Nitrogen Concentration Control
  • High-density, Low-electron Temperature Plasma With Excellent Uniformity

Low Temperature. Processing System

Side Wall Spacer/CESL

  • Low Temperature Thin Film Deposition
  • Excellent Film Qualities


Si/SiGe Epi Batch System

Selective Epi-Si (SiGe)

  • Defect Free Si/SiGe Epi
  • High Productivity


Advanced Batch Thermal Process System

Oxidation, LP-CVD Anneal

  • High Throughput
  • Short Cycle Time Production
  • Flexible Charge Size


Low Temp. Anneal System

BEOL Anneal

  • High Throughput
  • Quick Recovery
  • Excellent Stable Heater


Dry Strip System

Resist Strip
  • High Throughput
  • Low Plasma Damage