Kokusai Semiconductor Equipment Corporation is a world leader in the design, manufacture, installation, and maintenance of vertical Diffusion and Chemical Vapor Deposition (CVD) systems. For over three decades, Kokusai has been recognized as a pioneer in the field of thermal processing technology. Kokusai's furnaces are found in the majority of semiconductor fabrication facilities around the world. The world's leading integrated circuit manufacturers turn to Kokusai for new and innovative solutions to improve fabrication cycle time and productivity while also maintaining superior quality.

Vertical Systems
Hitachi Kokusai's vertical systems offer superior cost-of-ownership value while meeting stringent semiconductor process control, factory automation and system reliability requirements for advanced integrated circuit manufacturing of 150mm, 200mm and 300mm wafers.

Standard Process Offerings:
Oxides (Dry, Wet, Selective), Well Diffusion, Anneals (N₂, NO (N₂O), Ar, H₂, PH₃), Poly-Si (SiGe, Doped, Undoped), Si₃N₄, TEOS, HTO

Single-Wafer Systems
For Selective HSG, PH₃-Anneal, Doped/Undoped-Poly-Si & Poly-SiGe, Si₃N₄ applications. Hitachi Kokusai has achieved two critical features in its development of its 300mm single wafer chambers: cluster capable & advance film deposition. Targeting device geometries of less than 0.13 mm and advanced gate dielectrics (TaO₅, HfO, HfOSi), ZESTONE-VII's chamber is fully capable to handle both standard SiO₂/Poly-Si as well as metal organics and plasma assisted process films. In this generation of tool design, clustering is a requirement. Each of Kokusai's chambers is cluster capable (except the TΛNDUO" 300mm Ashing and VR300DS tools).

Plasma Oxidation & Nitridation Systems
MMT Plasma Nitridation System uses a modified magnetron typed (MMT) plasma source needed for ultra thin gate oxidation beyond the 90nm node device generation. MMT plasma technology's high density and low electron temperature enables high uniformity without damage to substrates. It can be used for gate oxidation processes for less than 90nm devices, can form oxidation film and enables continuous processing of gate dielectric and nitridation in the same reactor chamber.

Diffusion/LPCVD/Anneal Systems
Kokusai's development of its 300mm is available at 200mm as the process development was proven on 200mm and then scaled up to 300mm. This allows Kokusai to meet the development needs of all its customer regardless of design rule and wafer size. All of Kokusai's single wafer systems are design to meet the requirements for thermal budget management, reduced cycle time, integrated process sequencing, and ambient-controlled transfer chamber.

Kokusai's processing approach to high-k dielectrics is call Poly-atomic Layer Chemical Vapor Deposition (PLCVD). Our poly-atomic layer process provides improved deposition rates, uniform films and excellent method to extract the known products resulting in good electrical properties.