Kokusai’s High-k Gate Cluster Tool offers numerous advantages including; Higher Nitrogen incorporation by MMT Plasma Nitridation than by Rapid Thermal Nitridation (RTN) process.

Kokusai’s combination of Plasma Nitridation and Post Nitridation Anneal (PNA) eliminates HfSiON phase separation yielding a crystallization free film, while achieving higher levels of electron mobility than conventional Rapid Thermal Nitridation (RTN).