ADVANCED PROCESSES
N2, H2 & Ar Anneals (Substrate SOI)

As IC manufacturers drive toward 45nm technology, they are placing a greater emphasis on the incoming substrate's carrier mobility, crystal defects and electrical isolation properties. IC manufacturers and Silicon Wafer manufacturers alike are investing resources to develop SOI and defect-free bulk 200mm & 300mm silicon wafers. These wafers are expected to favorably compete economically against existing thin-epi alternatives.

Process

Kokusai System Advantages

Nitrogen
Argon
Hydrogen
  • 300 mm Capable
  • Max 1200 ° C - 1400 ° C for SOI anneal
  • Slip Free
  • High Productivity (Up to 100 wafers per batch - 300mm)

Recommended Products

  QUIXACE HT for 300mm
  VERTRON for 200mm