ADVANCED PROCESSES
Plasma Oxidation & Nitridation
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A nitrogen-containing bond structure is an excellent diffusion barrier against most dopants. By incorporating nitrogen into the gate, the boron diffusing from the gate is blocked before reaching the Si substrate. Nitridation is commonly used because of its ability to reduce boron penetration and for its superior gate oxide reliability when compared to thermal oxide. Recently, nitridation in nitric oxide has been proposed and has shown significant improvement in gate oxide reliability and resistance to hot-carrier induced degradation.
Kokusai’s MARORA MMT production system utilizes a gentle (electron temperature <1eV) direct plasma for sequential oxidation and nitridation steps within the same chamber. The controllable and adjustable plasma field results in extremely uniform film thicknesses with virtually no plasma damage.
MARORA is perhaps the most scalable tool of its type available today.
MARORA is bridge tool capable.
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Process |
Kokusai System Advantages |
Kr/O2 Plasma Oxidation |
- High oxidation rate
- Excellent oxide thickness control (1.0~8.0 nm)
- Near equivalent oxidation rate for Si (100) (111)
- Leakage and dielectric constant level match standard RTO oxides
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Oxide Nitridation |
- Reduced leakage current
- Prevents Boron penetration
- Increased dielectric constant
- Controllable Nitrogen concentration within oxide from 1x10e21 ~ 2x10e22 atoms/cm3
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Selective Oxidation of Tungsten and PolySi |
- Complete selectivity to silicon – no oxidation on Tungsten
- Bird’s beak is completely eliminated.
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Recommended Products |
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