ADVANCED PROCESSES
Low Temperature Nitrides

Kokusai’s array of low temperature nitride offerings includes Batch ALD Nitride and CVD Nitride. Many IC manufacturers are employing organic based low temperature silicon nitride solutions in order to reduce process temperature while avoiding drastic reductions in deposition rate. Kokusai has over five years of organic precursor Nitride experience. This experience is reflected in our tool configurations, in-situ gas cleans, scheduled downtime reduction strategies, and process understanding.

Our CVD Nitrides are performed in our standard 200mm VERTRON and 300mm QUIXACE vertical batch reactors, utilizing standard LPCVD temperature and pressure regimes. Another approach to thinner low temperature Nitrides is Atomic Layer Deposition (ALD). Using its well established 200mm and 300mm vertical batch platforms, Kokusai optimized the reactor design and gas switching technology to create our ALDINNA batch ALD system which achieves the fast and uniform precursor distribution that is essential to an ALD process and superior film qualities.

Process
Kokusai System Advantages
CVD and Silicon Nitride
  • Low temperature processing < 600° C
  • Set-up and design expertise
  • Liquid source and unique plumbing requirements
  • Cleaning: routines and frequencies
  • Reduced installation and start-up time
ALD Silicon Nitride
  • Unique stress engineering and control techniques
  • Low temperature deposition: < 450° C
  • Less loading effect (less pattern dependency)
  • Excellent step coverage: >98% (Aspect Ratio 1:3)
  • Low Si-H concentration
  • Excellent thickness uniformity
  • High throughput: ~30wph (30nm)

Recommended Products

Silicon Nitride Processes ALDINNA Large Batch ALD
CVD Silicon Nitride Processes QUIXACE for 300mm
CVD Silicon Nitride Processes VERTRON for 200mm

Technical Information

Thermal Trend of Side Wall Spacer - Silicon Nitride