The increasing sophistication of home electronics and telecommunication devices is propelling the demand for improved semiconductor devices. This is driving the need for increased speed and lower power consumption in the CMOS transistor structure.
Blanket SiGe Epi films are utilized to form HBT (hetero-junction bipolar transistor) structures. SiGe HBT devices achieve high-speed operation, low noise and low power consumption required by today’s radio frequency IC communication devices.
Selective SiGe films (selective Si is also available) are applied to strained-Si channels, which dramatically improve the speed and performance of leading edge CMOS devices. SiGe-based devices are expected to be widely adopted, which in turn, is expected to increase demand for a high productivity SiGe epitaxial growth system.
In a timely response to this demand, Kokusai has introduced an ultra-clean vertical batch furnace for SiGe epitaxial growth that operates within normal CVD (chemical vapor deposition) pressure regimes.
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