BIO

ADVANCED PROCESSES
Batch Isotropic Oxidation

One aspect of thermal oxidation that poses myriad challenges as devices shrink to 65nm and beyond is the propensity to deposit at different growth rates on different Si crystal orientations (<1-1-0> and <1-0-0>) and on different underlayer materials (i.e. poly Si and Si₃N₄). Another barrier in this device realm is the need to reduce processing temperatures as thermal budgets shrink along with the device geometries.

A new isotropic oxidation process developed by Kokusai eliminates these barriers and enables a simple furnace oxidation to be utilized once again for a variety of device applications. Further, the Kokusai solution employs a large batch approach to isotropic oxidation that provides the easiest maintenance and lowest CoO available.

Application	Kokusai System Advantages
STI Liner	Improved corner rounding and elimination of “bird’s beak”
Gate / Tunnel Dielectric	Superior device reliability and lower leakage
Inter Poly Dielectric	Exceptional Uniformity – less than 1A range across wafer
Metal / Poly Selective Oxidation	Oxide growth is selective to metal and poly Si
Monos Gate Oxidation	Oxidation of Si₃N₄ at low temperatures
All Applications	Excellent Uniformity – less than 1 angstrom range across wafer Large Batch provides lowest CoO Easy maintenance and highest uptime Isotropic Growth Rate - Very similar on <1-1-0> and <1-0-0> orientation - Very similar on poly Si and Si₃N₄

Recommended Products

	QUIXACE for 300mm
	VERTRON for 200mm
Technical Information

ADVANCED PROCESSES Batch Isotropic Oxidation

Application

Kokusai System Advantages

Recommended Products

Technical Information

ADVANCED PROCESSES
Batch Isotropic Oxidation