ADVANCED PROCESSES
Large Batch ALD
|
|
Large batch processing is the only way to dramatically reduce the cost of ownership of the inherently slow traditional ALD process methodology that requires repeated depositions of single atomic layers onto one wafer at a time.
Utilizing its well established and reliable 200mm & 300mm vertical batch platforms, Kokusai optimized the reactor designs and gas switching technology to create its new ALD platform called ALDINNA. Kokusai’s new ALDINNA platform achieves the fast and uniform precursor distribution cycles that are essential for an ALD process and superior film qualities.
|
|
Process |
Kokusai System Advantages |
SiN |
- Unique stress engineering and control techniques
- Low Temperature Deposition: < 450° C
- Reduced Loading Effect (Less Pattern Dependency)
- Excellent Step Coverage: >98% (Aspect Ratio 1:3)
- Low Si-H Concentration
- Excellent Thickness Uniformity
- High Throughput: ~30wph (30nm)
|
SiO |
- Robust process window
- No underlayer oxidation
- High uptime and throughput
|
TiN |
- Highest throughput solution available
|
HfO2 |
- Conformal, uniform films for both Hi-k gate and capacitor dielectric applications
|
Al2O3 |
- 100 wafer load while achieving industry leading uniformity capabilities
|
Recommended Products |
|
|
| |
ALD Process Applications
|
| |
 |
|
News