As IC manufacturers are driving towards 45nm technology, they are placing a greater emphasis on the incoming substrate's carrier mobility, crystal defects and electrical isolation properties. Both IC manufacturers and Silicon Wafer Manufacturers are investing time and money in SOI and defect-free bulk 200mm & 300mm silicon wafers. These wafers are expected to economically compete against thin-epi alternatives.
Typical 300mm Process Performance |
Process
|
Film
Thickness (nm) |
Wafer Batch Size |
Uniformity of Film Thickness |
Particles
( >0.2 mm ) |
Oxidation (Dry)
|
10 |
125 |
<±2% |
< 15 |
Oxidation (9% HCl) |
10 |
125 |
<±2% |
< 15 |
Thick-Oxidation (Wet)
|
100 |
125 |
<±2% |
< 15 |
Thin-Oxidation (Wet) |
5 |
125 |
<±2% |
< 15 |
Poly Si |
150 |
125 |
<±2% |
< 50 |
| Doped Poly Si |
100 |
125 |
<±3% |
< 50 |
Thick-Nitride |
180 |
125 |
<±3% |
< 70 |
Thin-Nitride |
7 |
125 |
<±3% |
< 50 |
Thick-TEOS |
300 |
125 |
<±3% |
< 70 |
Thin-TEOS |
12 |
125 |
<±3% |
< 70 |
HTO |
10 |
75 |
<±3.5% |
< 50 |
|
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