As IC manufacturers are driving towards 45nm technology, they are placing a greater emphasis on the incoming substrate's carrier mobility, crystal defects and electrical isolation properties. Both IC manufacturers and Silicon Wafer Manufacturers are investing time and money in SOI and defect-free bulk 200mm & 300mm silicon wafers. These wafers are expected to economically compete against thin-epi alternatives.
Typical 200mm Process Performance |
Process
|
Film
Thickness (nm) |
Wafer Batch Size |
Uniformity of Film Thickness |
Particles
( >0.2 mm ) |
Poly Si |
100 |
> 7 |
< ±2% |
< 30 |
Doped Poly Si |
100 |
> 1.5 |
< ±2% |
< 30 |
Thick-Nitride |
100 |
> 1.5 |
< ±2% |
< 30 |
Thin-Nitride |
5 |
> 0.2 |
< ±2% |
< 30 |
TEOS |
100 |
> 4 |
< ±2% |
< 30 |
HTO |
100 |
> 1.5 |
< ±2.5% |
< 30 |
Oxidation (Dry) |
10 |
-- |
< ±1.5% |
< 10 |
Thick-Pyro |
400 |
-- |
< ±1.5% |
< 10 |
Thin-Pyro |
3 |
-- |
< ±1.5% |
<10 |
|
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